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| VDI 50-12P1 VII 50-12P1 VID 50-12P1 VIO 50-12P1 IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO JK IC25 = 49 A = 1200 V VCES VCE(sat) typ. = 3.1 V VII OP9 VID IK10 VDI AC1 L9 X13 E2 A S LN GH10 SV18 X15 L9 NTC X15 T16 NTC AC1 NTC L9 X15 F1 X16 PS18 B3 Pin arangement see outlines K10 VX18 X16 IK10 X16 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C VGE = 15 V; RG = 47 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 47 ; TVJ = 125C non-repetitive TC = 25C Conditions Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 49 33 50 VCES 10 208 s W V V A A A Features * NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching * FRED diodes - fast reverse recovery - low forward voltage * Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate Advantages * space and weight savings * reduced protection circuits * leads with expansion bend for stress relief Typical Applications * AC and DC motor control * AC servo and robot drives * power supplies * welding inverters Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 3.1 3.5 4.5 3.7 6.5 1.1 4.2 180 100 70 500 70 4.6 3.4 1.65 1.2 V V V mA mA nA ns ns ns ns mJ mJ nF 0.6 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH IC = 50 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 30 A VGE = 15/0 V; RG = 47 VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT) with heatsink compound (0.42 K/m.K; 50 m) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 1-4 303 VDI 50-12P1 VII 50-12P1 VID 50-12P1 VIO 50-12P1 Reverse diodes (FRED) Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 30 A; TVJ = 25C TVJ = 125C Maximum Ratings 49 31 A A VII Characteristic Values min. typ. max. 2.4 1.77 27 150 2.6 2.7 V V A ns 1.3 K/W K/W IF = 30 A; diF/dt = 500 A/s; TVJ = 125C VR = 600 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 m) B3 Temperature Sensor NTC Symbol R25 B25/50 Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight VID IISOL 1 mA; 50/60 Hz mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s2 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K VIO Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g VDI IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 2-4 303 Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. VDI 50-12P1 VII 50-12P1 VID 50-12P1 VIO 50-12P1 80 A IC VGE = 17 V 15 V 13 V 11V 80 A IC 60 VGE = 17V 15V 13V 11V 60 40 TVJ = 25C 40 20 9V 20 9V TVJ = 125C 42T120 0 0 1 2 3 4 VCE 42T120 0 5 6V7 0 1 2 3 4 5 VCE 6V7 B3 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 80 A IC 50 40 A 30 60 VCE = 20V IF 40 20 TVJ = 125C TVJ = 25C 20 TVJ = 125C TVJ = 25C 42T120 10 42T120 0 4 6 8 10 12 VGE 0 14 V 16 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 50 trr 20 V 200 160 ns 120 TVJ = 125C VR = 600 V IF = 15 A 15 VGE 40 A IRM trr 30 10 VCE = 600V IC = 25A 20 10 IRM 42T120 80 40 5 0 0 40 80 120 QG nC 0 0 200 400 600 -di/dt 42T120 0 160 800 A/s 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 303 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 3-4 VDI 50-12P1 VII 50-12P1 VID 50-12P1 VIO 50-12P1 15 mJ Eon VCE = 600 V VGE = 15 V RG = 47 TVJ = 125C 150 ns 100 t Eoff 12 mJ td(off) Eoff 600 ns 400 t 10 8 VCE = 600V VGE = 15V RG = 47 TVJ = 125C td(on) tr 5 50 4 200 Eon 0 0 20 40 IC A 42T120 tf 0 0 0 20 40 IC A 42T120 60 0 60 B3 Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 160 4 mJ Eon td(on) 8 mJ t Eoff td(off) 800 ns ns 120 3 Eon tr VCE = 600 V VGE = 15 V IC = 25 A TVJ = 125C 42T120 6 Eoff 600 t 2 80 4 VCE = 600 V VGE = 15 V IC = 25 A TVJ = 125C 400 1 40 2 200 tf 0 0 20 40 60 RG 80 100 0 0 0 20 40 60 RG 42T120 80 100 0 Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 10 K/W diode 60 A ICM 40 RG = 47 TVJ = 125C ZthJC 1 IGBT 0,1 0,01 20 single pulse 0,001 0 0 200 400 600 VCE 42T120 800 1000 1200 1400 V 0,0001 0,00001 0,0001 0,001 MDI...50-12P1 0,01 0,1 t 1 s 10 Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 303 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 4-4 |
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